MAC12D

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TRIACS Silicon Bidirectional Thyristors Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70°C Uniform Gate Trigger currents in Three Modes High Immunity to dv/dt — 250 V/µs minimum at 125°C High Commutating di/dt — 6.5 A/ms minimum at 125°C Industry Standard TO–220 AB Package High Surge Current Capability — 120 Amperes *Motorola preferred devices MAC12 SERIES * TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MT2 G CASE 221A–06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 12 100 41 16 0.35 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Value Unit Volts On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from...