Triac
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TRIACS
Silicon Bidirectional Thyristors
Designed for high pe...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70°C Uniform Gate Trigger currents in Three Modes High Immunity to dv/dt — 250 V/µs minimum at 125°C High Commutating di/dt — 6.5 A/ms minimum at 125°C Industry Standard TO–220 AB Package High Surge Current Capability — 120 Amperes
*Motorola preferred devices
MAC12 SERIES *
TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
MT2
MT1 MT2 G
CASE 221A–06 (TO-220AB) Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 12 100 41 16 0.35 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Value Unit Volts
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from...
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