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MAC08BT1 Dataheets PDF



Part Number MAC08BT1
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Description Triac
Datasheet MAC08BT1 DatasheetMAC08BT1 Datasheet (PDF)

MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. • Sensitive Gate Trigger Current in Four Trigger Modes • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Device Marking: MAC08BT1: AC08B; MAC08MT1: A08M,.

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MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. • Sensitive Gate Trigger Current in Four Trigger Modes • Blocking Voltage to 600 Volts • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • Device Marking: MAC08BT1: AC08B; MAC08MT1: A08M, and Date Code http://onsemi.com TRIAC 0.8 AMPERE RMS 200 thru 600 VOLTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = 25 to 110°C) MAC08BT1 MAC08MT1 On–State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) Peak Non–repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80°C, Pulse Width Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 200 600 IT(RMS) ITSM 0.8 8.0 Amps Amps Value Unit Volts MT2 G MT1 4 1 2 3 SOT–223 CASE 318E STYLE 11 I2t PGM PG(AV) TJ Tstg 0.4 5.0 0.1 – 40 to +110 – 40 to +150 A2s 1 Watts Watt °C 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 v 1.0 µs) ORDERING INFORMATION °C Device MAC08BT1 Package SOT223 Shipping 16mm Tape and Reel (1K/Reel) 16mm Tape and Reel (1K/Reel) (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. MAC08MT1 SOT223 Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev. 3 Publication Order Number: MAC08BT1/D MAC08BT1, MAC08MT1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Symbol RθJA RθJT TL Max 156 25 260 Unit °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM — — — — 10 200 µA µA ON CHARACTERISTICS Peak On–State Voltage(1) (IT = 1.1 A Peak) " VTM IGT IH VGT — — — — — — — — 1.9 10 5.0 2.0 Volts mA mA Volts Gate Trigger Current (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) Holding Current (Continuous dc) (VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On–State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate–of–Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method) (1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. (dv/dt)c 1.5 — — V/µs dv/dt 10 — — V/µs http://onsemi.com 2 MAC08BT1, MAC08MT1 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 – IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (–) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT – (–) MT2 (–) MT2 + IGT Quadrant III (–) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC08BT1, MAC08MT1 0.15 3.8 0.079 2.0 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 0.244 6.2 0.984 25.0 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.096 2.44 0.059 1.5 0.096 2.44 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 4 MAC08BT1, MAC08MT1 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 Rθ JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ° C/W 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 1.0 L 4 1 2 3 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110.


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