Power GaAs MMIC Amplifier 2-6.5GHz
MAAM26100
GaAs MMIC Power Amplifier 2.0 - 6.5 GHz
Features
Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical P...
Description
MAAM26100
GaAs MMIC Power Amplifier 2.0 - 6.5 GHz
Features
Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant
Description
The MAAM26100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM26100 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems.
The MAAM26100 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars.
The MAAM26100 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability.
Ordering Information
Part Number MAAM26100
Package Die
Rev. V7
Die
Absolute Maximum Ratings 1,2
Parameter VDD
VG1, VG2 VGG3
RF Input Power Channel Temperature Storage Temperature
Absolute Maximum +9 V
-2.5 V to -0.8 V -6 V to -3 V +17 dBm 150°C
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device and will void product warranty.
2. M/A-COM does not recommend sustained operation near
these survivability limits. 3. VGG rating applies when using the optional on-chip resistor
network.
1
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is considering for developm...
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