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PHD12N10E

NXP

Transistor


Description
Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switc...



NXP

PHD12N10E

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