MA744

Schottky Barrier Diodes (SBD) MA3J744 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Small S-mini type package allowing high-density mounting Allowing to rectify under (IF(AV) = 200 mA) condition 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 150 −55 to +150 Unit V V mA mA A °C °C 0.9 ± 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin) Marking Symbol: M1M Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3 Conditions Min Typ Max 50 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF tr...