PHC20512

DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES High-speed switching No secondary breakdown Very low on-state resistance. APPLICATIONS Motor and actuator driver Power management Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 4 s1 handbook, halfpage PHC20512 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1 d1 d1 5 d2 d2 8 MAM118 g1 s2 g2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL Per channel VDS drain-source voltage (DC) N-channel P-channel VSD source-drain diode forward voltage N-channel P-channel VGS VGSth gate-source voltage (DC) gate-source threshold voltage N-channel P-channel ID drain current (DC) N-channel P-channel RDSon drain-source on-state resistance N-channel P-channel Ptot total power dissipation VGS = 10 V; ID = 3.2 A VGS = −10 V ID = −2 A Ts = 80 °C − − − 0.05 0.12 3.5 Ω Ω W VDS = VGS; ID = 1 mA VDS = VGS ; ID = −1 mA Ts...