MA6X126

Switching Diodes MA6X126 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 6 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + 0.1 Four-element contained in one package, allowing high-density mounting High breakdown voltage (VR = 80 V) 1.9 ± 0.2 0.95 0.95 2.9 − 0.05 + 0.2 5 2 4 3 1.1 − 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 1 : Anode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Cathode 3 3 : Anode 2 6 : Cathode 4 Mini Type Package (6-pin) Marking Symbol: M2S Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time*3 Symbol IR VF VR Ct1*1 Ct2*2 trr1*1 trr2*2 VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 15 2 10 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 5, Between pins 1 and 6 *2 : Between pins 4 and 2, Between pins 4 and 3 *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 0.1 · IR IF...