Silicon epitaxial planar type
Switching Diodes
MA6X123
Silicon epitaxial planar type
Unit : mm
For switching circuit
0.65 ± 0.15
2.8
+ 0.2 − 0.3 +...
Description
Switching Diodes
MA6X123
Silicon epitaxial planar type
Unit : mm
For switching circuit
0.65 ± 0.15
2.8
+ 0.2 − 0.3 + 0.25
1.5 − 0.05 6 1
0.65 ± 0.15
0.3 − 0.05
+ 0.1
1.1 − 0.1
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 −55 to +150
Unit V V mA mA mA °C °C
1 : Anode 1 4 : Anode 3 2 : Anode 2 5 : Anode 2 3 : Cathode 3,4 6 : Cathode 1,2 Mini Type Package (6-pin)
Marking Symbol: M2B Internal Connection
6 5 4 1 2 3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0 to 0.1
I Absolute Maximum Ratings Ta = 25°C
0.1 to 0.3 0.4 ± 0.2
0.8
0.16 − 0.06
Four-element contained in one package, allowing high-density mounting Centrosym...
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