Document
Fast Recovery Diodes (FRD)
MA111
MA649
Silicon planer type (cathode common)
0.7±0.1
For switching s Features
q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.5
Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg
Rating 200 200 5 30 – 40 to +150 – 40 to +150
Unit V V A A ˚C ˚C
1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package)
1 2 3
s Internal Connection
1
2
3
s Electrical Characteristics (Ta= 25˚C)
Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time Thermal resistance Symbol IRRM1 IRRM2 VF trr* Rth(j-c)* Rth(j-a) Condition VRRM= 200V, TC= 25˚C VRRM= 200V, Tj=150˚C IF= 2.5A, TC= 25˚C IF=1A, IR=1A Flat direct current between junction and case min typ max 100 6 1 100 3 63 Unit µA mA V ns ˚C/W ˚C/W
Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit
50Ω D.U.T 5.5Ω
50Ω IF IR
trr
0.1 × IR
Fast Recovery Diodes (FRD)
MA649
IF – VF
100 TC=25˚C
107
IR – VR
12
PD(AV) – IF(AV)
Ta=150˚C
IR (nA)
(A)
10
105
100˚C
Average forward current PD(AV) (W)
106
10
t0 t1
8 t0/t1=1/6 6
Forward current
IF
1
Ta=150˚C
25˚C
Reverse current
104
100˚C 0.1
103
1/3 1/2 DC
25˚C
4
102
2
0.01 0 0.4 0.8 1.2 VF 1.6 (V) 2.0 Forward voltage
10 0 50 100 150 200 250 300 Reverse voltage VR (V)
0 0 1 2 3 4 5 6 Average forward current IF(AV) (A)
IF(AV) – TC
6 t0/t1=1/2
Rth(t) – t
102 Without heat sink
(A)
5
Thermal resistance Rth (˚C/W)
1/3 1/6 4
DC
Average forward current
IF(AV)
10
3
1
2
10–1
1 t0 t1 0 30 50 100 TC (˚C) 150
10–2 10–4
10–3
10–2
10–1 Time
1 t (s)
10
102
103
104
Case temperature
.