Silicon planar type
Variable Capacitance Diodes
MA4X348
Silicon planar type
Unit : mm
For AFC of FM tuner
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1...
Description
Variable Capacitance Diodes
MA4X348
Silicon planar type
Unit : mm
For AFC of FM tuner
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
0.5 R
+ 0.1
3
0.4 − 0.05
Two elements contained independently, allowing high density mounting Small reverse current IR
1.9 ± 0.2
0.95
4
1
2.9 − 0.05
+ 0.2
0.95
0.5
2
0.2
I Absolute Maximum Ratings Ta = 25°C
1.1 − 0.1
+ 0.2
Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature
Symbol VR VRM Tj Tstg
Rating 15 15 150 −55 to +150
Unit V V °C °C
0.4 ± 0.2
1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1S Internal Connection
4 3 1 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 Diode capacitance Q CD Q VR = 12 V VR = 12 V, Ta = 75°C VR = 10 V, f = 1 MHz VR = 10 V, f = 50 MHz 10 40 Conditions Min Typ Max 100 1 16 Unit nA µA pF
Note) Rated input/output frequency: 50 MHz
0 to 0.1
0.1 to 0.3
0.8
0.16 − 0.06
+ 0.1
0.6 − 0
+ 0.1
0.4 − 0.05 1.45
I Features
+ 0.1
1
MA4X348
IF V F
103
10
Variable Capacitance Diodes
IR V R
1.6 1.4
VF Ta
102
Forward current IF (mA)
Reverse current IR (mA)
Forward voltage VF (V)
1
1.2 1.0 IF = 100 mA 0.8 0.6 0.4 0.2 10 mA 3 mA
10
100°C
25°C
Ta = 150°C 1
− 20°C
10−1
Ta = 150°C
100°C 10−2 25°C
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
10−3
0
5
10
15
20
25
30
0 −40
0
40
80
120
160
200
Forward voltage VF (V)
...
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