Document
Switching Diodes
MA4X193
Silicon epitaxial planar type
Unit : mm
Silicon epitaxial planar type
0.65 ± 0.15
2.8 − 0.3 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.5 R
0.2 1.1 − 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 80 80 70 150 250 150 −55 to +150 Unit V V mA mA mA °C °C
0.4 ± 0.2
1: Cathode 1 3: Anode 3 Anode 2 Cathode 4 2: Cathode 2, 3 4: Anode 1, 4 Mini Type Package (4-pin)
Marking Symbol: M2Z Internal Connection
4 3
0 to 0.1
0.1 to 0.3
0.8
1 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 70 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.16 − 0.06
+ 0.1
0.6 − 0
• Mini type 4-pin package, contained four elements • Short reverse recovery time trr • Bridge diodes for surface mounting • Anode common + cathode common composite product
1.9 ± 0.2
2.9 − 0.05
0.95
4
1
+ 0.2
0.95
0.5
+ 0.1
3
0.4 − 0.05
2
+ 0.1
0.4 − 0.05 1.45
I Features
+ 0.1
1
MA4X193
4-1 and 4-3 pins (anode common) characteristics charts IF V F
103 104 Ta = 150°C
1.4
Switching Diodes
IR V R
1.6
VF Ta
102
103
Forward current IF (mA)
Reverse current IR (nA)
Forward voltage VF (V)
100°C 102 25°C 10
1.2 1.0 0.8 IF = 100 mA 0.6 0.4 0.2 10 mA 3 mA
10
1
Ta = 150°C 100°C 25°C − 20°C
10−1
1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
10−1
0
20
40
60
80
100
120
0 −40
0
40
80
120
160
200
Forward voltage VF
(V)
Reverse voltage VR
(V)
Ambient temperature Ta (°C)
IR Ta
104 VR = 75 V
Ct VR
8 7 f = 1 MHz Ta = 25°C 1 000 300 100 30 10 3 1 0.3 0.1 0.03
IF (surge) tW
Ta = 25°C IF(surge) tW Non repetitive
Terminal capacitance Ct (pF)
103
35 V 6V
Reverse current IR (nA)
6 5 4 3 2 1
102
10
1
10−1 −40
0
0 40 80 120 160 200
0
20
40
60
80
100
120
Forward surge current IF(surge) (A)
0.1
0.3
1
3
10
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
Switching Diodes
1-2 and 3-2 pins (cathode common) characteristics charts IF V F
103 105
MA4X193
IR V R
Ta = 150°C
1.6 1.4
VF Ta
102
104
Forward current IF (mA)
Reverse current IR (nA)
Forward voltage VF (V)
100°C 103
1.2 1.0 0.8 0.6 0.4 0.2 IF = 100 mA
10
1
Ta = 150°C 100°C 25°C − 20°C
102
25°C
10 mA 3 mA
10−1
10
10−2
1 0 0.2 0.4 0.6 0.8 1.0 1.2
0
20
40
60
80
100
120
0 −40
0
40
80
120
160
200
Forward voltage VF
(V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR Ta
105 VR = 75 V 35 V 6V
Ct VR
1.2 f = 1 MHz Ta = 25°C
1 000 300 100 30 10 3 1 0.3 0.1 0.03
IF (surge) tW
Ta = 25°C IF(surge) tW Non repetitive
Terminal capacitance Ct (pF)
104
1.0
0.8
103
0.6
102
0.4
10
0.2
1 −40
0
40
80
120
160
200
0
Forward surge current IF(surge) (A)
Reverse current IR (nA)
0
20
40
60
80
100
120
0.1
0.3
1
3
10
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Pulse width tW (ms)
3
.