PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 November 2001 Product data
1. Produc...
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect
transistor
Rev. 01 — 14 November 2001 Product data
1. Product profile
1.1 Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK).
1.2 Features
s Low on-state resistance s Fast switching
1.3 Applications
s Computer motherboards s DC to DC converters
1.4 Quick reference data
s VDS = 25 V s Ptot = 93 W (Tmb = 25 °C) s ID = 75 A (Tmb = 25 °C) s RDSon = 9 mΩ (Tj = 25 °C)
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
1
MBK106
Simplified outline
mb mb mb
Symbol
[1]
d
g
2 3 1
MBK116
2 3
MBK091
MBB076
s
Top view
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect
transistor
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) tp ≤ 50 µs; pulsed; duty cycle 25 %; Tj ≤ 150 °C Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; V...
