PHB73N06T

PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP73N06T in SOT78 (TO-220AB) PHB73N06T in SOT404 (D2-PAK). 2. Features s Fast switching s Very low on-state resistance. 3. Applications s General purpose switching s Switched mode power supplies. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 MBK106 Simplified outline mb mb Symbol [1] d g s 2 3 MBK116 MBB076 1 2 3 SOT78 (TO-220AB) [1] 1. SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Tj = 25 °C; VGS = 10 V; ID = 25 A Typ − − − − 12 Max 55 73 149 175 14 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR...