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PHB6ND50E Dataheets PDF



Part Number PHB6ND50E
Manufacturers NXP
Logo NXP
Description Transistor
Datasheet PHB6ND50E DatasheetPHB6ND50E Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A g RDS(ON) ≤ 1.5 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recove.

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