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PHB6N50E

NXP

Transistor


Description
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHP6N50E, PHB6N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N...



NXP

PHB6N50E

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