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PHB60N06LT

NXP
Part Number PHB60N06LT
Manufacturer NXP
Description Transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Ve...
Datasheet PDF File PHB60N06LT PDF File

PHB60N06LT
PHB60N06LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP60N06LT, PHB60N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 58 A g s RDS(ON) ≤ 20 mΩ (VGS = 5 V) RDS(ON) ≤ 18 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP60N06LT is supplie...


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