PHB55N03LTA

PHP55N03LTA;PHB55N03LTA; PHD55N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 2 August 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s Computer motherboard high frequency DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Description 1 2 3 mb gate (g) drain (d) source (s) mounting base, connected to drain (d) [1] Symbol d g s 2 2 1 MBK106 MBB076 1 3 MBK116 3 MBK091 Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. 1. TrenchMOS is a trademark of Royal Phillips Electronics. Philips Semiconductors PHP55N03LTA series N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ 11 15 Max 25 55 85 175 14 18 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting va...