MA3X786E

Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification Two MA3X786s are contained in one package (cathode common) Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 2.8 0.65 ± 0.15 + 0.2 − 0.3 + 0.25 1.5 − 0.05 0.65 ± 0.15 0.95 1.9 ± 0.2 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 1.1 −0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A °C °C mA Unit V V mA 0.1 to 0.3 0.4 ± 0.2 1 : Anode 1 2 : Anode 2 JEDEC : TO-236 3 : Cathode 1, 2 EIAJ : SC-59A Mini Type Package(3-pin) Marking Symbol: M3Z Internal Connection 1 3 2 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.55 Unit µA ...