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PHB4ND40E

NXP
Part Number PHB4ND40E
Manufacturer NXP
Description PowerMOS transistors FREDFET/ Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitiv...
Datasheet PDF File PHB4ND40E PDF File

PHB4ND40E
PHB4ND40E

Overview
Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 4.
4 A g RDS(ON) ≤ 1.
8 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor cont...


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