MA3X555

PIN Diodes MA3X555 Silicon epitaxial planar type For UHF and SHF bands AGC I Features Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 1.1 − 0.1 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 Anode 1 Mini Type Package (3-pin) Marking Symbol: M2H Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.8 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 1 MA3X555 IF  V F Ta = 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 1 1 000 2 100 IR  Ta VR = 40 V Diode capacitance CD (pF) Forward curr...