MA3X551

PIN Diodes MA3X551 Silicon epitaxial planar type Unit : mm For UHF and SHF bands AGC 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.95 1.9 ± 0.2 2.9 − 0.05 + 0.2 1 3 2 0.95 1.45 I Features Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature VRM IF PD Topr Tstg 45 100 150 −25 to +85 −55 to +150 V mA mW °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: MY Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 Reverse voltage (DC) VR 40 V 0.1 to 0.3 0.4 ± 0.2 0.8 Parameter Symbol Rating Unit 1.1 − 0.1 0.16 − 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25°C 0.4 − 0.05 + 0.1 1 MA3X551 IF  V F 1 000 Ta = 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 1 2 100 IR  T a VR = 40 V Diode capacitance CD (pF) Forward curren...