Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanc...
Philips Semiconductors
Product specification
PowerMOS
transistors Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance
PHP4N60E, PHB4N60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 4.5 A RDS(ON) ≤ 2.5 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB4N60E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 4.5 2.9 18 125 150 UNIT V V V A A A W ˚C
December 1998
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS
transistors Avalanche energy rate...