MA3X199

Switching Diodes MA3X199 Silicon epitaxial planar type 2.8 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 For high voltage switching circuit I Features High breakdown voltage: VR = 200 V Short reverse recovery time trr Small package, allowing automatic mounting 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s VR VRRM IF(AV) IFRM IFSM Tj Tstg 200 250 100 225 500 150 −55 to +150 V V mA mA mA °C °C 0.1 to 0.3 0.4 ± 0.2 1.1 0.8 Parameter Symbol Rating Unit 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3A Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 200 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Conditions Min Typ Max 1 1.2 3 60 Unit µA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.16 − 0.06 + 0.2 − 0.1 + 0.1 I Absolute Maximu...