MA3X158

Switching Diodes MA3X158 Silicon epitaxial planar type Unit : mm For small power rectification and surge absorption 0.65 ± 0.15 2.8 + 0.2 − 0.3 + 0.25 1.5 − 0.05 0.65 ± 0.15 0.95 2 1.1 − 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge voltage Output current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM VRSM IF(AV) IFSM Tj Tstg Rating 200 250 300 100 500 125 −55 to +125 Unit V V V mA mA °C °C 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M1C Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.0 1.3 Unit µA V Note) Rated input/output frequency: 3 MHz 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.8 0.16 − 0.06 + 0.2 I Absolute Maximum Ratings Ta = 25°C + 0.1 0.4 − 0.05 High reverse voltage VR Large forward current IF(AV) Small package and allowing automatic mounting 1.9 ± 0.2 2.9 − 0.05 + 0.2 1 3 0.95 + 0.1 1.45 I Features 1 MA3X158 IF  V F 102 Ta = 125°C 10 75°C – 20°C 1 Switching Diodes IR  V R 10 1.2 VF  Ta Forward current IF (mA) Reverse current IR (µA) Forward voltage VF (V) 25°C 1 1.0 Ta = 125°C IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.1 mA 10−1 75°C 10−2 10–1 10–2 10−3 25°C 0.2 10–3 0 0.2 0.4 0.6 0.8 1.0 1.2 10−4 0 0 40...