Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA3X152E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65 ± 0.15
2.8 − 0.3 1.5 − ...
Description
Switching Diodes
MA3X152E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65 ± 0.15
2.8 − 0.3 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.95
2
Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double
VRM IF IFM IFSM Tj Tstg
80 100 150 225 340 500 750 150 −55 to +150
V mA
mA
1 : Anode 1 2 : Anode 2 JEDEC : TO-236 3 : Cathode 1, 2 EIAJ : SC-59 Mini Type Package (3-pin)
mA °C °C
Marking Symbol: MU Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0 to 0.1
Reverse voltage (DC)
VR
80
V
0.1 to 0.3 0.4 ± 0.2
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.1
0.16 − 0.06
+ 0.2
+ 0.1
I Absolute Maximum Ratings Ta = 25°C
0.4 − 0.05
Short reverse recovery time trr Small terminal capacitan...
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