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PHB4N40E Dataheets PDF



Part Number PHB4N40E
Manufacturers NXP
Logo NXP
Description PowerMOS transistors Avalanche energy rated
Datasheet PHB4N40E DatasheetPHB4N40E Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP4N40E, PHB4N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 4.4 A RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monit.

  PHB4N40E   PHB4N40E


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