Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA3S132A
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 ...
Description
Switching Diodes
MA3S132A
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 0.80 0.51 0.51
1.60 ± 0.1 0.80 0.80 ± 0.05
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 −55 to +150
Unit V V mA mA mA °C °C
0.60 − 0.03
0.44
0.44
+ 0.05
0.88 − 0.03
1 : Cathode 2 : NC 3 : Anode SS-Mini Type Package (3-pin)
Marking Symbol: MB Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.12 − 0.02
+ 0.05
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
0.28 ± 0.05
Short reverse recovery time trr Small terminal capacitance, Ct Super-small SS-mini type package, allowing high-density mounting
+ 0.05
I Features
1
...
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