PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect transistor
Rev. 02 — 02 November 2001 Product data
1. Descri...
PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect
transistor
Rev. 02 — 02 November 2001 Product data
1. Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s Computer motherboard high frequency DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline
mb mb mb
Pin Description 1 2 3 mb gate (g)
Symbol
d
drain (d) source (s) mounting base, connected to drain (d)
[1]
g s
MBB076
2 2 1
MBK106
1 3
MBK116
3
MBK091
Top view
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 3.5 V; ID = 5.2 A Typ 13 17.5 22 Max 25 40 65 175 21 24 40 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting...