MA3J700

Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 S-mini type 3-pin package Allowing to rectify under (IF(AV) = 500 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 −55 to +150 Unit V V mA A °C °C 0.9 ± 0.1 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M2W Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 35 V IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 60 5 Conditions Min Typ Max 100 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 100 mA IR =...