N type GaAs epitaxial planar type
Variable Capacitance Diodes
MA2Z393
N type GaAs epitaxial planar type
Unit : mm
For VCO of a communications equipment
...
Description
Variable Capacitance Diodes
MA2Z393
N type GaAs epitaxial planar type
Unit : mm
For VCO of a communications equipment
INDICATES CATHODE 0.4 ± 0.15
Small series resistance rD and high Q value Large capacitance ratio during low-voltage operation
0.4 ± 0.15
1
2
1.7 ± 0.1 2.5 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 10 50 125 −55 to +125 Unit
0.9 ± 0.1
V mA °C °C
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 7P
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Diode capacitance Series resistance* Symbol IR VF VR CD(1V) CD(4V) rD VR = 6 V IF = 500 mA IR = 1 µA VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz CD = 4.5 pF, f = 470 MHz 10 8 2.1 10.5 3.6 0.3 13 5.1 0.4 Conditions Min Typ Max 50 0.8 Unit nA V V pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
0.3 − 0.05
+ 0.1
1.25 ± 0.1
I Features
1
MA2Z393
IF V F
120 Ta = 25°C
100
Variable Capacitance Diodes
IR V R
Ta = 25°C
CD VR
12 f = 1 MHz Ta = 25°C 10
100
Reverse current IR (nA)
10
Diode capacitance CD (pF)
Forward current IF (mA)
80
8
60
1
6
40
4
0.1
20
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0
2
4
6
8
10
0 0.1
1
10
100
Forward voltage VF (V)
Reverse voltage VR (V)
Reverse...
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