Variable Capacitance Diodes
Variable Capacitance Diodes
MA2Z376 (MA376)
Silicon epitaxial planar type
Unit: mm
For VCO of UHF band radio s Feature...
Description
Variable Capacitance Diodes
MA2Z376 (MA376)
Silicon epitaxial planar type
Unit: mm
For VCO of UHF band radio s Features
Small series resistance rD S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.30+0.10 –0.05 2
1.7±0.10
2.5±0.2
1 1.25±0.10
5˚
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C
7˚
(0.4)
0.16 +0.10 –0.06
0.00±0.05
0.90±0.15
0.9±0.1
1: Anode 2: Cathode SMini2-G1 Package
Marking Symbol: 7C
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR CD(1V) CD(3V) rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Ω Unit nA pF
Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SKD00041BED
(0.4)
1
MA2Z376
I F VF
120
100
CD VR
f = 1 MHz Ta = 25°C
1.04
CD Ta
f = 1 MHz VR = 1 V 3V
100
50
1.03
Diode capacitance CD (pF)
Forward current IF (mA)
30
60
25°C
−40°C
10
CD (Ta) CD (Ta = 25°C)
0 4 8 12 16 20 24 28 32 36 40
80
Ta = 60°C
20
1.02
1.01
40
5 3 2
1.00
20
0.99
0 0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.98 0 20 40 60 80 100
Forward voltage VF (V)
Reverse volta...
Similar Datasheet