PHB/PHD38N02LT
TrenchMOS™ logic level FET
Rev. 01 — 30 June 2003 Product data
1. Product profile
1.1 Description
N-chann...
PHB/PHD38N02LT
TrenchMOS™ logic level FET
Rev. 01 — 30 June 2003 Product data
1. Product profile
1.1 Description
N-channel logic level field-effect
transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK).
1.2 Features
s Low on-state resistance s 2.5 V gate drive.
1.3 Applications
s Linear
regulator for DDR memory.
1.4 Quick reference data
s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ
2. Pinning information
Table 1: 1 2 3 mb Pinning - SOT404 and SOT428 simplified outlines and symbol Simplified outline
[1]
mb
Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
mb
d
g s
MBB076
2 1 Top view 3
MBK091
2 1 3
MBK116
SOT428 (D-PAK)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pul...