Silicon epitaxial planar type
Variable Capacitance Diodes
MA2Z357
Silicon epitaxial planar type
Unit : mm
For CATV tuner I Features
• Large capacita...
Description
Variable Capacitance Diodes
MA2Z357
Silicon epitaxial planar type
Unit : mm
For CATV tuner I Features
Large capacitance ratio Small series resistance rD
0.4 ± 0.15
INDICATES CATHODE
0.4 ± 0.15
1
2
1.7 ± 0.1 2.5 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage* Junction temperature Storage temperature Note) * : RL = 10 kΩ Symbol VR VRM Tj Tstg Rating 34 35 150 −55 to +150 Unit V V °C °C
0.9 ± 0.1
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 7K
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(0V)*1 CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance*2 CD(2V)/CD(25V) ∆C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 0 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 58.0 29.00 2.53 6.40 3.50 11.0 2.0 0.54 34.30 2.92 8.32 4.35 Conditions Min Typ Max 10 Unit nA pF pF pF pF pF % Ω
Note) 1 Rated input/output frequency: 470 MHz 2 *1 : Measurement at Low Signal Level *2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
0.3 − 0.05
+ 0.1
1.25 ± 0.1
1
MA2Z357
IF V F
120 − 40°C 100 50
Variable Capacitance Diodes
CD VR
f = 1 MHz Ta = 25°C
100
IR Ta
100
Diode capacitance CD (pF)
Forward current IF (mA)
Reverse current IR (µA)
0 4 8 12 16 20 24 28 32 36 40
Ta = 60°C 25°C
30 20
10
80
60
...
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