MA2Z331

Variable Capacitance Diodes MA2Z331 Silicon epitaxial planar type Unit : mm I Features Small series resistance rD. rD = 0.18 Ω (typ.) Good linearity of C − V curve Small type package, optimum for down-sizing of equipment INDICATES CATHODE 0.4 ± 0.15 1 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 −55 to +150 Unit V °C °C 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 0.9 ± 0.1 mA 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 6T I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(2V) CD(4V) CD(10V) Capacitance ratio CD(1V)/CD(4V) CD(2V)/CD(10V) Series resistance* rD CD = 9 pF, f = 470 MHz VR = 12 V VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz 17.0 14.0 10.0 5.5 1.53 2.25 6.0 1.6 2.5 0.18 15.0 Conditions Min Typ Max 10 20.0 16.0 12.4 6.5 1.83 2.75 0.22 Unit nA pF pF pF pF   Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.06 + 0.1 0.3 − 0.05 + 0.1 1.25 ± 0.1 1 MA2Z331 CD  VR 100 f = 1 MHz Ta = 25°C 120 Variable Capacitance Diodes IF  V F 1.04 CD  Ta f = 1 MHz VR = 1 V 50 100 Diode capacitance CD (pF) 30 20 Forward current IF (mA) − 40°C 1.03 CD(Ta) CD(Ta = 25°C) 80 Ta = 60°C 25°C 1.02 2V 4V 10 V 10 60 1.01 5 3 2 40 1.00 20...