Silicon epitaxial planar type
Variable Capacitance Diodes
MA2SV05
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
• Good linear...
Description
Variable Capacitance Diodes
MA2SV05
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
Good linearity and large capacitance-ratio in CD VR relation Small series resistance rD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02
0.8 ± 0.1
+ 0.05
I Features
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 10 150 −55 to +150
Unit V °C °C
0.7 ± 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: 3A
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.5 3.6 4.7 0.65 Conditions Min Typ Max 10 20.5 4.1 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
0.27 − 0.02
+ 0.05
1
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