MA2SV02

Variable Capacitance Diodes MA2SV02 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. 0.15 min. I Features Good linearity and large capacitance-ratio in CD  VR relation Small series resistance rD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.0 7.3 2.1 Conditions Min Typ Max 10 20.0 9.0 2.6 0.3 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C 0.27 − 0.02 + 0.05 1 MA2SV02 IF  V F 120 25°C 100 Variable Capacitance Diodes CD  VR f = 1 MHz Ta = 25°C 100 IR  Ta VR = 5 V 100 50 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60°C − 40°C 30 20 60 10 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 1 40 5 3 2 0.1 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) ...