Silicon epitaxial planar type
Variable Capacitance Diodes
MA2SV02
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
I Features
• ...
Description
Variable Capacitance Diodes
MA2SV02
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
I Features
Good linearity and large capacitance-ratio in CD VR relation Small series resistance rD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02 0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 6 150 −55 to +150
Unit V °C °C
0.7 ± 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 18.0 7.3 2.1 Conditions Min Typ Max 10 20.0 9.0 2.6 0.3 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
0.27 − 0.02
+ 0.05
1
MA2SV02
IF V F
120 25°C 100
Variable Capacitance Diodes
CD VR
f = 1 MHz Ta = 25°C
100
IR Ta
VR = 5 V
100
50
Diode capacitance CD (pF)
Forward current IF (mA)
80
Ta = 60°C
− 40°C
30 20
60
10
Reverse current IR (nA)
0 4 8 12 16 20 24 28 32 36 40
10
1
40
5 3 2
0.1
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
...
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