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PHB36N06E

NXP
Part Number PHB36N06E
Manufacturer NXP
Description PowerMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION N-channel enhancement...
Datasheet PDF File PHB36N06E PDF File

PHB36N06E
PHB36N06E

Overview
Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
60 41 125 175 38 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolu...


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