MA2SD10

Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to + 125 Unit V V A mA mA °C °C 1.20 − 0.03 + 0.05 1.60 ± 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 2L Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Ct Conditions VR = 10 V IF = 5 mA IF = 200 mA VR = 0 V, f = 1 MHz 40 Min Typ Max 20 0.27 0.47 Unit µA V V pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 0.60 − 0.03 0.01 ± 0.01 + 0.05 0.80 − 0.03 + 0.05 1 MA2SD10 IF  V F 1 10−1 Ta...