MA2S111

Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits I Features Super-small SS-mini type package Allowing high-density mounting Short reverse recovery time trr Small terminal capacitance, Ct 1.60 ± 0.05 ( 0.2 ) 1.20 − 0.03 0.30 ± 0.05 0.80 − 0.03 + 0.05 + 0.05 1 2 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.6 ± 0.05 1 : Anode 2 : Cathode EIAJ : SC-79 SS-Mini Type Package (2-pin) Marking Symbol: A I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR =100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 0.6 2 3 0.95 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.15 ± 0.05 I Absolute Maximum Ratings Ta = 25°C 1 MA2S111 IF  VF 103 Switching Diodes IR  V R 105 1.6 1.4 VF  Ta 102 ...