Rectifier Diodes
Rectifier Diodes
MA2J115
Silicon epitaxial planar type
Unit : mm
For small power current rectification I Features
• Sm...
Description
Rectifier Diodes
MA2J115
Silicon epitaxial planar type
Unit : mm
For small power current rectification I Features
Small S-mini type package, allowing high-density mounting High reverse voltage VR
0.5 ± 0.1 K A 0.625
2 0.16 − 0.06
+ 0.1
1
1.25 ± 0.1 0.7 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 200 200 200 600 Unit V V mA mA
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 Anode 2 Cathode S-Mini Type Package (2-pin)
1 150 −55 to +150
A °C °C
Marking Symbol: 1F
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 200 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.2 Unit nA V pF
Note) Rated input/output frequency: 3 MHz
0.3
1
MA2J115
IF V F
1 000 100°C 25°C 100
Rectifier Diodes
VF Ta
1.6 1.4
10 100°C 100
IR V R
Ta = 150°C
Forward current IF (mA)
Forward voltage VF (V)
Ta = 150°C 10
− 20°C
1.2 1.0 IF = 200 mA 0.8 0.6 0.4 0.2 10 mA 3 mA
Reverse current IR (nA)
1
1
0.1 25°C 0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0 −40
0.001
0
40
80
120
160
200
0
40
80
120
160
200
240
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR Ta
100 VR = 200 V 100 V 10 V
Ct VR
3 ...
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