MA2C188

Switching Diodes MA2C188 Silicon epitaxial planar type Unit : mm For high speed and high voltage switching, small-power rectification I Features Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole High voltage (VR: 200 V) rectification is possible φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 13 min. 0.2 max. Parameter Reverse voltage (DC) Peak reverse voltage Average power dissipation Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM PF(AV) IO IFRM IFSM Tj Tstg Rating 200 250 400 200 625 1 175 −65 to +175 Unit V V mW mA mA A °C °C 2 φ 1.75 max. 1: Cathode 2: Anode JEDEC: DO-34 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 200 V IF = 200 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 250 1.0 60 Conditions Min Typ Max 200 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Output Puls A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 13 min. I Absolute Maximum Ratings Ta = 25°C 2.2 ± 0.3 1 MA2C188 IF  VF 1 000 1 000 Switching Diod...