Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA2C165, MA2C166, MA2C167
Silicon epitaxial planar type
For switching circuits I Features
• Short reve...
Description
Switching Diodes
MA2C165, MA2C166, MA2C167
Silicon epitaxial planar type
For switching circuits I Features
Short reverse recovery time trr Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE φ 0.45 max. 1
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) MA2C165 MA2C166 MA2C167 Repetitive peak reverse voltage MA2C165 MA2C166 MA2C167 Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s IF(AV) IFRM IFSM Tj Tstg VRRM Symbol VR Rating 35 50 75 35 50 75 100 225 500 200 −55 to +200 mA mA mA °C °C V
2
0.2 max.
Unit V
0.2 max.
φ 1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2C165 Symbol IR VR = 15 V VR = 30 V MA2C166 VR = 15 V VR = 50 V MA2C167 VR = 20 V VR = 75 V MA2C165 MA2C166 MA2C167 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* MA2C165 MA2C166/167 MA2C165 VF VR Ct trr VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V, Irr = 0.1 · IR, RL = 100 Ω 2.2 35 0.9 2 10 4 50 0.95 0.012 Conditions Min Typ Max 0.025 0.1 0.025 5 0.025 5 100 100 100 1.2 V V pF ns Unit µA
Note) 1. Rated input/output frequency: 100 MHz (MA2C165), 250 MHz (MA2C167), 1 000 MHz (MA2C166)
2. * : trr measuring circuit
I Cathode Indication
Type No. Color MA2C165 MA2C166 Whit...
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