PHB23NQ15T

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP23NQ15T, PHB23NQ15T FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. PINNING PIN 1 2 3 tab gate drain1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 150 150 ± 20 23 16 92 136 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS™ transist...