Silicon epitaxial planar type Switching Diodes
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Description
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Switching Diodes
MA3V177 (MA177)
Silicon epitaxial planar type
For switching circuits
I Features
Small terminal capacitance, Ct Can be connected in series
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature
VR VRM
IF IFM Tj Tstg
40 40 100 200 150 −55 to +150
Unit V V mA mA °C °C
15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6
4.0±0.2
2.0±0.2
Unit : mm
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
Internal Connection
0.45+–00..1200
0.7±0.1
1 : Anode 2 : Cathode
Anode 3 : Cathode NS-B1 Package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance
IR VF VR Ct1*1 Ct2*2
Note)...
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