For 1.9 GHz - Power Amplifier
MA1046-1
For 1.9 GHz - Power Amplifier
MA1046-1
2. Electrical Performances (Tc = +25°C, VD 1, 2 = 6V, VD3 = 10V, VG 1, ...
Description
MA1046-1
For 1.9 GHz - Power Amplifier
MA1046-1
2. Electrical Performances (Tc = +25°C, VD 1, 2 = 6V, VD3 = 10V, VG 1, 2 = –5V, VG 3 = –3V, Zg = Zl = 50Ω)
No. 1 Items Frequency Power Gain Temperature Characteristics (Power Gain) Gain Variation Drain Current Gate Current ACP ∆ 600 kHz ∆ 900 kHz 8 9 10 Occupied Band Width Input VSWR Spurious In Band Out Band 2 nd 3 rd 11 12 Stability against load variation Intensity against load variation ∆G ID 12 ID 3 6 7 IG 12 IG 3 ACP1 ACP2 ––– ρ in ––– ––– 2 SP 3 SP ––– ––– Po = +35 dBm Load VSWR = 1:3 All Phase Po = +35 dBm Zl = OPEN, SHORT 10 seconds each Po = +35 dBm Non-modulation < 6 GHz f= Symbol f G Po = +35 dBm π / 4 Shift QPSK Modulation –PN9 Condition Standard Min 1895 33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Type ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max 1918 ––– ±2 ±0.5 400 1400 2 5 –65 –70 288 2.0 –70 –60 –30 –45 Unit MHz dB dB dB mA mA mA mA dBc dBc KHz ––– dBc dBc dBc dBc
DESCRIPTION
The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50Ω.
OUTLINE DRAWING
62 Max. 57 1.8 3.6
21 Max.
2
25 Max.
MA1046-1
10 a 0.5 b c d e f g h i
19.5
3 4 5
FEATURES
Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz Vd1, 2 = +6.0V, Vd3 = +10.0V Vg1, 2 = –5.0V, Vg3 = 3.0V
2 8 5 5 10 5 5 10 5 8
1 RF IN
1.2
50 Max.
2 GND 3 VG12 4 VD12...
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