MA08509D

MA08509D 10W Power Amplifier Die (8.0-11 GHz) FEATURES Broadband Performance 32% Typical Power Added Efficiency 50 Ω Input/Output Impedance Preliminary Release VDD V DD Self-Aligned MSAG® MESFET Process RF IN RF OUT VGG Description The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM’s mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Maximum Ratings (T Rating A = 25 °C unless otherwise noted) Symbol Value DC Drain Supply Voltage DC Gate Supply Voltage RF Input Power Junction Temperature Storage Temperature VDD VGG PIN TJ TSTG 12 -6 500 150 -40 to +85 Unit Vdc Vdc mW °C °C ELECTRICAL CHARACTERISTICS VDD = 10.0 V, VGG = -4 V, PIN = 18 dBm, TA = 25 °C Characteristic Symbol Min Typ Max Unit Frequency Output Power, saturated Power Gain, saturated Gain Flatness Over Frequency @ Pin = 18 dBm ƒ PSAT GSAT PAE S11 2ƒο, 3ƒο Rth 8.0 39.0 20 25 Power Added Efficiency (POUT=PSAT) Return Loss Harmonics Output Stage Thermal Resistance @ Pin = 18 dBm 40 22 +/- 1.0 32 -6 -30 5.4 11.0 41.5 -4 GHz dBm dB dB % dB dBc °C/W Specifications subject to change without notice. 902179 D North America: Tel. (800)366-2266, Fax (800)618-8883 Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information 10W Power Amplifier Die (8-11 GHz) TYPICAL CHARACTERI...