MA02305AK

3.0 V 100 mW RF Power Amplifier IC for Bluetooth V 1.00 MA02305AK Features n 20 dB Gain – dramatically increases range of your low MA02305AK power Bluetooth devices n Single 3.0V positive supply – operates over a wide range of supply voltages n Extremely small size – 6 pin SOT plastic package n n n n n 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation Self-Aligned MSAG®-Lite MESFET Process Description The MA02305AK is an RF power amplifier based on M/ACOM’s Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices. Output power can be controlled to meet Bluetooth requirements via varying input power or the voltage on VDD1. Maximum Ratings Rating DC Supply Voltage (TA = 25°C unless otherwise noted) Symbol V DD PIN TJ TSTG Value 5.5 10 150 -40 to +150 Unit V mW °C °C Ordering Information Part Number MA02305AK-R7 MA02305AK-SMB Package 7 inch, 3000 Piece Reel MA02305AK Test Board RF Input Power Junction Temperature Storage Temperature Range Electrical Characteristics: Characteristic VDD1 = 2.5 V, VDD2 = 3 V, PIN = +0 dBm, Duty Cycle = 100%, T A = 25°C Symbol ƒ POUT η 2ƒ 3ƒ S21 RT H Min 2400 18.7 40 20 45 -30 -27 1.5 -25 180 -26 -22 2.0 Typ Max 2500 Unit MHz dBm % dBc :1 dB °C/W Frequency Range Output Power f = 2450 MHz Power Added Efficiency f = 2450 MHz Harmonics Input VSWR Off Isolation (VDD=0 V)...