MA02303GJ

RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Features Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V Output Power 28.5 dBm @ 5.0 V 100 Percent Duty Cycle 2200 to 2600 MHz Operation 8 Pin MSOP Full Downset Plastic Package Operates Over Wide Ranges of Supply Voltage Self-Aligned MSAG®-Lite MESFET Process Functional Schematic PIN 1 PIN 8 Description The MA02303GJ is an RF power amplifier based on M/A-COM’s Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products. For booster applications, it features a low power “bypass” mode and output power control PIN Configuration PIN 1 2 3 4 VD1 RFIN / VG1 GND VG2 VG3 GND RFOUT / VD3 VD2 Function Description Drain voltage, first stage RF input and drain voltage for first stage Ground Gate bias voltage, second stage Gate bias voltage, third stage Ground RF output and drain voltage for third stage Drain voltage for second stage Ordering Information Part Number MA02303GJ-R7 MA02303GJ-R13 MA02303GJ-SMB Description 7 inch, 1000 piece reel 13 inch, 3000 piece reel Sample test board 5 6 7 8 Package bottom is electrical and thermal ground Absolute Maximum Ratings 1 Rating DC Supply Voltage RF Input Power Junction Temperature Storage Temperature Operating Temperature Moisture Sensitivity Symbol VDD PIN TJ TSTG TOPER Value 5.5 10 150 -40 to +150 -40 to...