MA01502D

MA01502D Limiter/Low Noise Amplifier Die (8.5 - 12.0 GHz) FEATURES 8.5 to 12 GHz Operation 10W CW Power Handling Capability 50Ω Input Impedance Preliminary Release Balanced Two Stage LNA with Limiter Excellent Return Loss Self-Aligned MSAG® MESFET Process DESCRIPTION The MA01502D is a balanced, two-stage low noise amplifier and limiter die fabricated using ® M/A-COM’s mature GaAs Self-Aligned MSAG MESFET Process. This product is fully matched to 50 ohms on both the input and the output. MAXIMUM RATINGS Rating (TA = 25 °C unless otherwise noted) Symbol Value DC Drain Supply Voltage DC Gate Supply Voltage RF Input Power Junction Temperature Storage Temperature VDD VGG PIN TJ TSTG 8 -6 15 150 -40 to +150 Unit Vdc Vdc W °C °C ELECTRICAL CHARACTERISTICS VDD=5.0 V, VGG=-5.0 V, Characteristic Frequency Range T=25 °C, Input and Output Connected to 50 Ω System. Symbol Min Typ Max Unit Gain 1dB Compression Point Gain Flatness (Peak-to-Peak over any 250 MHz band) Noise Figure Input Third Order Intercept Point Input and Output Return Loss Drain Bias voltage Gate Bias Voltage Drain Supply Current (No RF) Drain Supply Current (Max @ Pin = 10 Watts) Gate Supply Current Power Handling Capability (CW up to 30 minutes continuous exposure) f G P1db — NF TOI RL VDD VGG IDD IDD IGG PRF 8.5 13 — — 13 — — — — 10 — 14 +20 0.4 2.7 13 20 5 -5 — — — — 12.0 18 1 3.5 — — 160 200 30 — GHz dB dBm dB dB dBm dB VDC VDC mA mA mA W Specifications subject to change withou...